Metallic Spintronic Devices (Record no. 5887)

MARC details
000 -LEADER
fixed length control field 02126 a2200325 4500
001 - CONTROL NUMBER
control field 1466588454
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20250317111622.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 250312042017xx 152 eng
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781466588455
037 ## - SOURCE OF ACQUISITION
Source of stock number/acquisition Taylor & Francis
Terms of availability GBP 84.99
Form of issue BB
040 ## - CATALOGING SOURCE
Original cataloging agency 01
041 ## - LANGUAGE CODE
Language code of text/sound track or separate title eng
072 7# - SUBJECT CATEGORY CODE
Subject category code TBN
Source thema
072 7# - SUBJECT CATEGORY CODE
Subject category code TJFC
Source thema
072 7# - SUBJECT CATEGORY CODE
Subject category code THR
Source thema
072 7# - SUBJECT CATEGORY CODE
Subject category code TBN
Source bic
072 7# - SUBJECT CATEGORY CODE
Subject category code TJFC
Source bic
072 7# - SUBJECT CATEGORY CODE
Subject category code THR
Source bic
072 7# - SUBJECT CATEGORY CODE
Subject category code SCI055000
Source bisac
072 7# - SUBJECT CATEGORY CODE
Subject category code TEC007000
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072 7# - SUBJECT CATEGORY CODE
Subject category code TEC008000
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072 7# - SUBJECT CATEGORY CODE
Subject category code TEC008010
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072 7# - SUBJECT CATEGORY CODE
Subject category code 621.3
Source bisac
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Xiaobin Wang
245 10 - TITLE STATEMENT
Title Metallic Spintronic Devices
250 ## - EDITION STATEMENT
Edition statement 1
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. CRC Press
Date of publication, distribution, etc. 20171219
300 ## - PHYSICAL DESCRIPTION
Extent 274 p
520 ## - SUMMARY, ETC.
Expansion of summary note Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also: Describes spintronic applications in current and future magnetic recording devices Discusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modeling Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis Investigates spintronic device write and read optimization in light of spintronic memristive effects Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic Metallic Spintronic Devices aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.

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