Silicon Nanoelectronics (Record no. 7230)

MARC details
000 -LEADER
fixed length control field 02659 a2200289 4500
001 - CONTROL NUMBER
control field 1420028642
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20250317111637.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 250312042017xx eng
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9781420028645
037 ## - SOURCE OF ACQUISITION
Source of stock number/acquisition Taylor & Francis
Terms of availability GBP 65.99
Form of issue BB
040 ## - CATALOGING SOURCE
Original cataloging agency 01
041 ## - LANGUAGE CODE
Language code of text/sound track or separate title eng
072 7# - SUBJECT CATEGORY CODE
Subject category code TBN
Source thema
072 7# - SUBJECT CATEGORY CODE
Subject category code TBN
Source bic
072 7# - SUBJECT CATEGORY CODE
Subject category code TEC027000
Source bisac
072 7# - SUBJECT CATEGORY CODE
Subject category code TEC007000
Source bisac
072 7# - SUBJECT CATEGORY CODE
Subject category code COM059000
Source bisac
072 7# - SUBJECT CATEGORY CODE
Subject category code TEC008000
Source bisac
072 7# - SUBJECT CATEGORY CODE
Subject category code 621.381
Source bisac
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Shunri Oda
245 10 - TITLE STATEMENT
Title Silicon Nanoelectronics
250 ## - EDITION STATEMENT
Edition statement 1
260 ## - PUBLICATION, DISTRIBUTION, ETC.
Name of publisher, distributor, etc. CRC Press
Date of publication, distribution, etc. 20171219
300 ## - PHYSICAL DESCRIPTION
Extent 328 p
520 ## - SUMMARY, ETC.
Expansion of summary note Technological advancement in chip development, primarily based on the downscaling of the feature size of transistors, is threatening to come to a standstill as we approach the limits of conventional scaling. For example, when the number of electrons in a device's active region is reduced to less than ten electrons (or holes), quantum fluctuation errors will occur, and when gate insulator thickness becomes too insignificant to block quantum mechanical tunneling, unacceptable leakage will occur. Fortunately, there is truth in the old adage that whenever a door closes, a window opens somewhere else. In this case, that window opening is nanotechnology.<br/><br/>Silicon Nanoelectronics takes a look at at the recent development of novel devices and materials that hold great promise for the creation of still smaller and more powerful chips. Silicon nanodevices are positoned to be particularly relevant in consideration of the existing silicon process infrastructure already in place throughout the semiconductor industry and silicon's consequent compatibility with current CMOS circuits. This is reinforced by the nearly perfect interface that can exist between natural oxide and silicon.<br/><br/>Presenting the contributions of more than 20 leading academic and corporate researchers from the United States and Japan, Silicon Nanoelectronics offers a comprehensive look at this emergent technology. The text includes extensive background information on the physics of silicon nanodevices and practical CMOS scaling. It considers such issues as quantum effects and ballistic transport and resonant tunneling in silicon nanotechnology. A significant amount of attention is given to the all-important silicon single electron transistors and the devices that utilize them.<br/><br/>In offering an update of the current state-of-the-art in the field of silicon nanoelectronics, this volume serves well as a concise reference for students, scientists, engineers, and specialists in various fields, in
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name David Ferry
Relationship B01

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